features trenchfet power mosfet new low thermal resistance powerpak package with low 1.07-mm profile low gate charge 100% r g tested applications synchronous rectifier si7892adp vishay siliconix new product document number: 73092 s-41913?rev. a, 25-oct-04 www.vishay.com 1 n-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) q g (typ) 30 0.0042 @ v gs = 10 v 25 25 30 0.0057 @ v gs = 4.5 v 22 25 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak so-8 bottom view ordering information: SI7892ADP-T1 SI7892ADP-T1?e3 (lead (pb)-free) n-channel mosfet g d s absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 30 v gate-source v oltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 25 15 continuous drain current (t j = 150 c) a t a = 70 c i d 20 12 pulsed drain current (10 s pulse width) i dm 60 a continuous source current (diode conduction) a i s 4.5 1.6 avalanche current l = 0.1 mh i as 50 maximum power dissipation a t a = 25 c p d 5.4 1.9 w maximum power dissipation a t a = 70 c p d 3.4 1.2 w operating junction and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 18 23 maximum junction-to-ambient a steady state r thja 50 65 c/w maximum junction-to-case (drain) steady state r thjc 1.0 1.5 c/w notes a. surface mounted on 1? x 1? fr4 board.
si7892adp vishay siliconix new product www.vishay.com 2 document number: 73092 s-41913?rev. a, 25-oct-04 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a drain - source on - state resistance a r ds(on) v gs = 10 v, i d = 25 a 0.0033 0.0042 drain - so u rce on - state resistance a r ds(on) v gs = 4.5 v, i d = 22 a 0.0045 0.0057 forward t ransconductance a g fs v ds = 15 v, i d = 25 a 80 s diode forward voltage a v sd i s = 4.5 a, v gs = 0 v 0.75 1.2 v dynamic b input capacitance c iss 2800 output capacitance c oss v ds = 15 v, v gs = 0 v, f = 1 hz 830 pf reverse transfer capacitance c rss ds gs 360 p total gate charge q g 25 35 gate-source charge q gs v ds = 15 v, v gs = 4.5 v, i d = 25 a 6.7 nc gate-drain charge q gd ds gs d 9.7 gate resistance r g 0.5 1.2 2.0 turn-on delay time t d(on) 17 30 rise time t r v dd = 15 v, r l = 15 10 20 turn-off delay time t d(off) v dd = 15 v , r l = 15 i d 1 a, v gen = 10 v, r g = 6 65 130 ns fall time t f g 35 60 source-drain reverse recovery time t rr i f = 2.9 a, di/dt = 100 a/ s 50 80 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics (25 c unless noted) 0 10 20 30 40 50 012345 0 10 20 30 40 50 60 012345 v gs = 10 thru 4 v 25 c t c = 125 c ? 55 c 3 v output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d
si7892adp vishay siliconix new product document number: 73092 s-41913?rev. a, 25-oct-04 www.vishay.com 3 typical characteristics (25 c unless noted) 0.000 0.004 0.008 0.012 0.016 0.020 0246810 0.000 0.002 0.004 0.006 0.008 0.010 0 102030405060 0 2 4 6 8 10 0 102030405060 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ? 50 ? 25 0 25 50 75 100 125 150 0 1000 2000 3000 4000 0 6 12 18 24 30 c rss c oss c iss v ds = 15 v i d = 25 a v gs = 10 v i d = 25 a v gs = 4.5 v v gs = 10 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) 1.0 1.2 1 10 60 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c source-drain diode forward voltage v sd ? source-to-drain voltage (v) ? source current (a) i s i d = 25 a on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v gs ? gate-to-source voltage (v) r ds(on) ? on-resiistance (normalized)
si7892adp vishay siliconix new product www.vishay.com 4 document number: 73092 s-41913?rev. a, 25-oct-04 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 50 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0 120 200 40 80 power (w) single pulse power time (sec) 160 110 0.1 0.01 0.001 ? 1.0 ? 0.8 ? 0.6 ? 0.4 ? 0.2 ? 0.0 0.2 0.4 0.6 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a threshold voltage variance (v) v gs(th) t j ? temperature ( c) safe operating area, junction-to-case v ds ? drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified 100 1 0.1 1 10 100 0.01 10 1 ms ? drain current (a) i d 0.1 limited by r ds(on) * t c = 25 c single pulse 10 ms 100 ms dc 10 s 1 s
si7892adp vishay siliconix new product document number: 73092 s-41913?rev. a, 25-oct-04 www.vishay.com 5 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effecti ve transient thermal impedance vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locati ons. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73092 .
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